| 摘要 |
PROBLEM TO BE SOLVED: To provide a sapphire single crystal production device capable of preventing crack generation at cooling time to ambient temperature, after growing a single crystal by a temperature gradient coagulation method.SOLUTION: In the sapphire single crystal production method for growing the single crystal by setting a single crystal 44 at a bottom side in a crucible 41, melting a raw material 45 under temperature gradient of rising temperature from a bottom to a top of the crucible 41, and solidifying the raw material melt, from a single crystal 44 side, includes: the crucible 41 having a side wall 411 of a taper form with an inner diameter getting larger from the bottom to the top; a growing crystal support section 421 for supporting a growing crystal 46 in the crucible 41; a growing crystal transfer mechanism 42 connected to the growing crystal support section 421, including a crystal transfer axis 422 which vertically moves the growing crystal support section 421 in the crucible 41. A bottom opening 412A is provided in the bottom section 412 of the crucible 41, and the crystal transfer axis 422 passes through the bottom opening 412A, with at least a part of that housed in the crucible 41 in the sapphire single crystal production device.SELECTED DRAWING: Figure 4 |
