MEMORY DEVICE, MEMORY MODULE INCLUDING THE SAME, AND MEMORY SYSTEM INCLUDING THE SAME

摘要

A memory device includes a first memory cell, a second memory cell, a precharge circuit, a sense amplifier, a switch circuit, and a controller. The first memory cell is connected to a first bit line, the second memory cell is connected to a second bit line, and the precharge circuit connected between the first bit line and the second bit line. The sense amplifier includes a first input terminal and a second input terminal. The switch circuit is connected to the first bit line and the first input terminal and to the second bit line and the second input terminal and is configured to control a connection between the first bit line and the first input terminal and a connection between the second bit line and the second input terminal in response to a switch signal. The controller is configured to generate the switch signal in response to a command.

主权项

1. A memory device including:
a first memory cell connected to a first bit line; a second memory cell connected to a second bit line; a precharge circuit connected between the first bit line and the second bit line; a sense amplifier including a first input terminal and a second input terminal; a switch circuit connected to the first bit line and the first input terminal and to the second bit line and the second input terminal, the switch circuit configured to control a connection between the first bit line and the first input terminal and a connection between the second bit line and the second input terminal in response to a switch signal; and a controller configured to generate the switch signal in response to a command.