Wafer level package and fabrication method thereof

摘要

A semiconductor device includes a chip having an active surface and a rear surface that is opposite to the active surface; a molding compound covering and encapsulating the chip except for the active surface; and a redistribution layer (RDL) on the active surface and on the molding compound. The RDL is electrically connected to the chip. The RDL includes an organic dielectric layer and an inorganic dielectric hard mask layer on the organic dielectric layer. The RDL further includes metal features in the organic dielectric layer and the inorganic dielectric hard mask layer.

主权项

1. A semiconductor device, comprising:
a chip having an active surface and a rear surface that is opposite to the active surface; a molding compound at least partially encapsulating the chip; and a redistribution layer (RDL) on the active surface and on the molding compound, wherein the RDL is electrically connected to the chip, wherein the RDL comprises at least an organic dielectric layer and an inorganic dielectric hard mask layer on the organic dielectric layer, and wherein the RDL further comprises metal features in the organic dielectric layer and the inorganic dielectric hard mask layer, wherein the inorganic dielectric hard mask layer acts as a pattern transferring hard mask when transferring a circuit pattern of the metal features into the organic dielectric layer.