| 发明名称 | Methods of forming fins for FinFET semiconductor devices and the resulting devices | ||
| 摘要 | A method includes forming a plurality of fins above a substrate, forming at least one dielectric material above and between the plurality of fins, and forming a mask layer above the dielectric material. The mask layer has an opening defined therein. At least one etching process is performed to remove a portion of the at least one dielectric material exposed by the opening so as to expose a top surface portion and sidewall surface portions of at least one fin in the plurality of fins. The at least one dielectric material remains above the substrate adjacent the at least one fin. An etching process is performed to remove the at least one fin. | ||
| 申请公布号 | US9449881(B1) | 申请公布日期 | 2016.09.20 |
| 申请号 | US201514710053 | 申请日期 | 2015.05.12 |
| 申请人 | GLOBALFOUNDRIES Inc. | 发明人 | Sung Min Gyu;Xie Ruilong |
| 分类号 | H01L21/8234;H01L21/311;H01L21/308;H01L21/764;H01L21/762;H01L21/3105;H01L29/66 | 主分类号 | H01L21/8234 |
| 代理机构 | Amerson Law Firm, PLLC | 代理人 | Amerson Law Firm, PLLC |
| 主权项 | 1. A method, comprising: forming a plurality of fins above a substrate; forming at least one dielectric material above and between said plurality of fins, said dielectric material including a cap layer disposed on top surface portions of said plurality of fins; forming a mask layer above said dielectric material, said mask layer having an opening defined therein; performing at least one etching process to remove a portion of said at least one dielectric material exposed by said opening so as to remove portions of said dielectric material and cap layer exposed by said opening to expose said top surface portion and sidewall surface portions of at least one fin in said plurality of fins, wherein said at least one dielectric material remains above said substrate adjacent said at least one fin; and performing an etching process to remove said at least one fin. | ||
| 地址 | Grand Cayman KY | ||