SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which generation of defects is inhibited.SOLUTION: A semiconductor device 100 comprises: a substrate 10; first nitride semiconductor layers 31, 32 provided on the substrate 10; a second nitride semiconductor layer 33 provided on the first nitride semiconductor layers 31, 32; a third nitride semiconductor layer 34 provided on the second nitride semiconductor layer 33; electrodes 50, 51 provided on the third nitride semiconductor layer 34; and an insulation layer 40 which is provided between the first nitride semiconductor layers 31, 32 and the second nitride semiconductor layer 33 and provided under the electrodes 50, 51.SELECTED DRAWING: Figure 1