| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a process gas supply nozzle, which can improve uniformity of supply of a process gas to a substrate.SOLUTION: A substrate processing apparatus comprises a plate on which a substrate is placed substantially horizontally and a cover for covering a surface of the substrate placed on the plate. The cover includes an undersurface adjacent to the surface of the substrate and a gas flow path for supplying a process gas to the substrate. The gas flow path includes a swirl chamber 31, a diameter decreasing chamber 35 and a diameter increasing chamber 39. The swirl chamber 31 has a cylindrical shape with centering on a substantially vertical axis as a central axis. In the swirl chamber 31, the process gas flows around the central axis. The diameter decreasing chamber 35 is provided under the swirl chamber 31 and connected with the swirl chamber 31. The diameter decreasing chamber 35 has an inner diameter which decreases with the increasing distance from a top edge toward a bottom edge of the diameter decreasing chamber 35. The diameter increasing chamber 39 is provided under the diameter decreasing chamber 35 and connected with the diameter decreasing chamber 35. The diameter increasing chamber 39 has an inner diameter which increases with the increasing distance from a top edge toward a bottom edge of the diameter increasing chamber and the bottom edge opens on the undersurface of the cover.SELECTED DRAWING: Figure 3 |
