发明名称 |
ARRAY SUBSTRATE, ITS MANUFACTURING METHOD AND DISPLAY DEVICE |
摘要 |
The present disclosure provides an array substrate, its manufacturing method and a display device. The array substrate includes a gate electrode, a gate insulation layer formed on the gate electrode, an active layer formed on the gate insulation layer, source/drain electrodes arranged at a layer identical to the active layer, and a pixel electrode arranged at a layer identical to the active layer. The active layer includes a metal oxide semiconductor, and the source/drain electrodes and the pixel electrode each include an ion-implanted metal oxide semiconductor. |
申请公布号 |
US2016322388(A1) |
申请公布日期 |
2016.11.03 |
申请号 |
US201615090149 |
申请日期 |
2016.04.04 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. ;HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
MA Jun;HUANG Yinhu;YANG Chengshao;YIN Bingkun;HAN Junhao |
分类号 |
H01L27/12;H01L29/66 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. An array substrate, comprising:
a gate electrode; a gate insulation layer formed on the gate electrode; an active layer formed on the gate insulation layer; source/drain electrodes arranged at a layer identical to the active layer; and a pixel electrode arranged at a layer identical to the active layer, wherein the active layer comprises a metal oxide semiconductor, and the source/drain electrodes and the pixel electrode each comprise an ion-implanted metal oxide semiconductor. |
地址 |
Beijing CN |