Method for producing self-aligned metallisations for FET

摘要

Method for producing self-aligned metallisations for FET on a semiconductor body (2) having a web (1), which involves applying a gold layer (4) over the entire surface area of the semiconductor body (2), and a gap each being etched at the edges of the web (1) into the gold layer (4) grown there in a porous manner at the sides of the web (1), the base width (6) of the gap being defined by the duration of the etching process. <IMAGE>