Semiconductor power device.

摘要

A semiconductor power switching device has an insulated gate (24) which establishes charge carier flow between a terminal (GR) and a base region (12), to provide current flow through the device between collector and emitter terminals (C,E). The device in effect comprises a bipolar transistor with an integral MOSFET for driving its base, so that a small signal applied to the gate drives the bipolar transistor into saturation. In use the collector is connected to a supply rail though a load and the terminal (GR) is connected directly or indirectly to the same rail.