发明名称 |
Double-diffused drain CMOS process using a counterdoping technique. |
摘要 |
<p>The present process comprises the use of a blanket phosphorus (n-) implant coupled with a masked boron (p+) implant to permit the elimination of the conventional n+ implant and the LDD masks. The use of the blanket n- implant and the masked p+ implant allows production of an n- drain region which reduces hot-electron-induced degradation and a low concentration S/D region which is subsequently more easily counterdoped by a high concentration implant. A shallow blanket n+ implant is included prior to the P+ mask step to prevent contact resistance problems. Thereafter in the process of this invention, a salicide is formed at the sources and drains to produce a low sheet resistance in the contacts of the n-channel devices, notwithstanding the absence of the conventional thick n+ layer.</p> |
申请公布号 |
EP0405292(A1) |
申请公布日期 |
1991.01.02 |
申请号 |
EP19900111513 |
申请日期 |
1990.06.19 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
LIOU, TIAN-I;TENG, CHIH-SIEH |
分类号 |
H01L29/78;H01L21/8238;H01L27/092 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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