METHOD OF MANUFACTURING MOSFET OF SEMICONDUCTOR DEVICE FOR PREVENTING CHANNEL DEPLETION AND SECURING STABLE EFFECTIVE CHANNEL LENGTH

摘要

PURPOSE: A method of manufacturing an MOSFET(Metal Oxide Semiconductor Field Effect Transistor) of a semiconductor device is provided to prevent channel depletion due to heat treatment by forming previously an impurity junction layer and to secure a stable effective channel length by forming an epitaxial layer between the source and drain junction layers. CONSTITUTION: An impurity junction layer is formed in a semiconductor substrate(100) and a heat treatment is performed on the resultant structure. Isolation layers(110) are formed in the substrate by using an STI process. A source/drain junction layer(104a) are formed by etching the center of the impurity junction layer between the isolation layers. An epitaxial layer(116) is formed between the source/drain junction layers. A gate electrode(120) is formed on the epitaxial layer via a gate insulating layer(118).