发明名称 VOLTAGE NONLINEAR RESISTOR MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To greatly reduce the grain resistance of a sintered block and the limit voltage by sintering it in a neutral or weak reductive atmosphere until the atmosphere changes to an oxidative atmosphere in a temp. step of the cooling process of the baking. SOLUTION: In a voltage nonlinear resistor manufacturing method, zinc oxide being a main component is mixed with an additive contg. at least bismuth oxide, formed and baked. Only a temp. step of the cooling process of the baking is conducted in an oxidative atmosphere and ranges from 900 deg.C to 600 deg.C with a temp. width of at least 100 deg.C. This temp. step within the range of 900-600 deg.C takes at least one hr. and the temp. descending rate in the cooling process of the baking is 100 deg.C/hr. or less. The oxygen partial pressure in the oxidative atmosphere is 0.15atm. or more.</p>
申请公布号 JPH09260109(A) 申请公布日期 1997.10.03
申请号 JP19960067756 申请日期 1996.03.25
申请人 NGK INSULATORS LTD 发明人 UMEMOTO KOUICHI;ITO TADASHI
分类号 H01C7/10;(IPC1-7):H01C7/10 主分类号 H01C7/10
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