IMPROVED CHEMICAL PLANARIZATION PERFORMANCE FOR COPPER/LOW-K INTERCONNECT STRUCTURE FOR REDUCING EFFECTIVE DIELECTRIC CONSTANT AND IMPROVING RELIABILITY

摘要

PURPOSE: An improved chemical planarization performance for copper/low-k interconnect structure is provided to reduce an effective dielectric constant and improve reliability by providing an ultra low k dielectric layer plus a Cu interconnect structure of a single or a dual damascene type. CONSTITUTION: An electrical interconnect structure on a substrate(1) includes a first low k or ultra low k dielectric layer(3), a low k CMP protective layer disposed on the first low k dielectric layer, and a CVD hardmask/CMP polishing stop layer(7). The first low k dielectric layer is a first spin-on low k dielectric layer. The first low k dielectric layer is formed with an organic dielectric material. The spin-on low k dielectric layer is selected from the group including SiLKTM, GX-3TM, porous SiLKTM, GX-3pTM, JSR LKD 5109TM, porous spin-on SiwCxOyHz material, spin-on dielectric material, low k spin-on dielectric material, and porous low k spin-on dielectric material.