| 摘要 |
<p>PROBLEM TO BE SOLVED: To form an electron emitting element to emit an electron by using a tunnel effect, and prevent dielectric breakdown by impression voltage by arranging a conductive layer on one surface of a dielectric base board, arranging a dielectric layer and a conductive layer on the other surface, and forming the dielectric layer so as to have a specific thickness and a dielectric constant lower than the dielectric base board. SOLUTION: A conductive layer (1) 11 is arranged on one surface of a dielectric base board 10, and a dielectric layer 12 and a conductive layer (2) 13 are arranged on the other surface, and a thickness of the dielectric layer 12 is set not more than 5nm. When voltage is impressed between the conductive layer (1) 11 of this element and the conductive layer (2) 13 so that conductive layer (1) 11 becomes a cathode and the conductive layer (2) 13 becomes an anode, a positive hole and an electron are generated on an interface between the dielectric base board 10 and the dielectric layer 12, and the electron passes through into the dielectric layer 12 by a tunnel effect, and reaches the conductive layer (2) 13, and is emitted from a surface of the conductive layer (2) 13. The positive hole rejoins with the electron in the conductive layer (1) 11 through the dielectric base board 10. An electron emitting quantity from the conductive layer (2) 13 changes by a structure of the element and impression voltage.</p> |
