| 摘要 |
PROBLEM TO BE SOLVED: To provide a cheap applied system such as a laser optical transmission module, an optical interconnection, an optical fiber communication or the like where a surface emitting laser is used as a light source at a low cost by a method wherein the surface emitting laser excellent in characteristics is produced being kept high in yield and the surface emitting laser which is low in series resistance, excellent in characteristics, and capable of emitting a laser beam of long wavelengths band (1.2 to 1.6μm). SOLUTION: A surface emitting laser is composed of an N-type GaAs substrate 1, an N-type semiconductor multilayer film reflective mirror 2, a first GaAs spacer layer 3, an active layer 4, a second GaAs spacer 5, a current constriction layer 6, a P-type GaAs current introduction layer, a regrowth interface 8, a P-type third GaAs spacer layer 9, and multilayer film reflective mirror 10. The current constriction layer 6 is formed of wide band gap semiconductor such as AlInP, AlGaInP or AlAs whose band gap is above 2e V, and an aperture layer is formed through a photolithography process and a regrowth process, whereby a surface emitting laser of this constitution can be markedly improved in yield.
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