Semiconductor device especially an SOI MOSFET

摘要

A semiconductor device has charge carrier discharge electrodes (B1, B2) for discharging charge carriers produced by impact ionization in transistors. A semiconductor device has: (a) first and second impurity ion implantation layers (32, 36) of predetermined conductivity type in a semiconductor substrate having a buried oxide film (22) and overlying silicon layers (23); (b) first and second transistors of predetermined conductivity type on the respective first and second impurity ion implantation layers; (c) trenches between the transistors; (d) single crystal silicon layers (33, 37) formed on the trench side walls and connected to the transistor source/drain regions and to the first and second impurity ion implantation layers; and (e) charge carrier output electrodes (B1, B2) connected to the first and second impurity ion implantation layers at one of the transistor sides for output of charge carriers produced by impact ionization in the transistors. An Independent claim is also included for production of the above device.