METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FOR IMPROVING PLANARIZATION

摘要

PURPOSE: A manufacturing method of a semiconductor device for improving flatness is provided to minimize a stepped difference between a DRAM area and a logic area by forming a capacitor on the DRAM area and a metal pattern on the logic area. CONSTITUTION: A capacitor(24) is formed on a memory device area of a substrate(20). The first insulating layer(25) is formed on a front face of the substrate(20) and the memory device area and a logic device area are locally flattened. A metal layer pattern(26) is contacted with the logic device area of the substrate(20). The metal layer pattern(26) has a height similar to the capacitor(24). The second insulating layer is formed on the front face of the substrate(20). A planarization process for the second insulating layer is performed.