发明名称 HIGH POWER SEMICONDUCTOR LIGHT SOURCE
摘要 A semiconductor light source comprises superluminescent diodes (SLDs) (110) disposed on a substrate (58) having a facet, channels (120) separating the SLDs, and a mode expander region (160). Each SLD has a diamond shaped active region such that the front and rear end of each SLD ends in a taper. The mode expander region is disposed on at least one side of the tapers of the SLDs and is tapered into a waveguide extending to the facet.
申请公布号 WO9966613(A9) 申请公布日期 2000.06.29
申请号 WO1999US13568 申请日期 1999.06.16
申请人 SARNOFF CORPORATION 发明人 ALPHONSE, GERRY, A.
分类号 G02B6/122;G02B6/30;H01L33/00;H01S5/026;H01S5/10;H01S5/14;H01S5/20;H01S5/40;H01S5/42;H01S5/50;(IPC1-7):H01S3/18;H01S3/19;H01S3/08;H01S3/085 主分类号 G02B6/122
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