MASK PATTERN FORMATION METHOD AND PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To provide a mask pattern formation method by which the dimensional accuracy of the pattern of a photomask is enhanced and a photomask having no harmful effect on a wafer step and easy to put to practical use can be manufactured. SOLUTION: The mask pattern forming method has (A) while a first film pattern forming step in which a photosensitive resist is applied on a film to be worked on a substrate, first pattern forming is carried out using first pattern data for forming a pattern obtained by adding a dummy pattern which uniformizes pattern forming area density or etching area density to the objective pattern and then photoengraving and etching are carried out to form a first film pattern including an added dummy film pattern and (B) a dummy film pattern removing step in which a photosensitive resist is applied on the substrate in such a way that the entire first film pattern is coated, second pattern forming is carried out using second pattern data for coating the objective pattern part and disclosing only the dummy film pattern part and then photoengraving and etching are carried out to remove only the dummy film pattern from the first film pattern and to obtain a second film pattern used as the objective film pattern.