| 摘要 |
PROBLEM TO BE SOLVED: To provide a synchronous type semiconductor memory, in which a test can be performed in which minute defective leakage of a bit line can be previously detected. SOLUTION: An internal signal RAS, generated according to a command input and indicating activation of a row is delayed according to a clock signal int.CLKI, and a sense amplifier activating signal SS is outputted. Thereby, the time from activation of a word line by a signal WLT to the activation of a sense amplifier can be set longer than normal, and minute leakage of bit line can be detected.
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