| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for preventing short-circuiting between a collector and a base, without increasing the size of an element and parasitic capacitance, and to provide a method for manufacturing the semiconductor device. SOLUTION: This semiconductor device is equipped with a field insulating film 4 that is formed on a semiconductor substrate, a collector region 3 that is formed in a surface layer on the semiconductor substrate, a base region 5 that is formed in a collector region surface layer, while the base region comes into contact with the field insulating film, an emitter region 6 that is formed on a base region surface layer, an interlayer dielectric 10 that is formed on an active region and the field insulating film, an opening 11 that is formed in the interlayer dielectric on the base region and is embedded by a conductive material, and an etching stopper layer 15 that is formed on the field insulating film at least near the base region, is partially exposed in the opening 11, and is composed by a material that can make etching rate much slower as compared with the interlayer dielectric.
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