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发明名称
DOPING PROFILE IMPROVEMENT OF IN-SITU DOPED N-TYPE EMITTERS
摘要
申请公布号
EP1900015(A2)
申请公布日期
2008.03.19
申请号
EP20060765881
申请日期
2006.06.26
申请人
NXP B.V.
发明人
DE BOER, WIEBE
分类号
H01L21/331;H01L29/08;H01L29/10
主分类号
H01L21/331
代理机构
代理人
主权项
地址
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