| 摘要 |
PROBLEM TO BE SOLVED: To perform heat treatment of a wafer properly by suppressing distortion of a heat plate due to temperature variation. SOLUTION: A bottom plate 140 secured to an apparatus body is arranged below a heat plate 130 which is supported by a vertical supporting rod 151 standing on the bottom plate 140. The vertical supporting rod 151 supports the backside of the heat plate 130 through a heat insulation member and is secured to a guide member 132 on the surface of the heat plate 130. The heat plate 130 is provided with an outer circumferential wall 160 and a clearance is provided between the heat plate 130 and the outer circumferential wall 160. A temperature control room K is formed by the outer circumferential wall 160, and temperature controlled gas can be supplied from a nozzle 170 or a gas supply hole in the outer circumferential wall 160 to the temperature control room K. COPYRIGHT: (C)2008,JPO&INPIT
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