HIGH-K HETEROSTRUCTURE,申请号WO2007IB03415-传众专利搜索

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发明名称	HIGH-K HETEROSTRUCTURE
摘要	<p>A method for preparing a multilayer substrate, comprising the step of deposing an epitaxial Y-AI2O3 Miller indice (001) layer (22) on a Si Miller indice (001) substrate (20).</p>
申请公布号	WO2009027765(A1)	申请公布日期	2009.03.05
申请号	WO2007IB03415	申请日期	2007.08.28
申请人	STMICROELECTRONICS SA;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE-CNRS-;ECOLE CENTRALE DE LYON;MERCKLING, CLEMENT;EL-KAZZI, MARIO;SAINT-GIRONS, GUILLAUME;HOLLINGER, GUY	发明人	MERCKLING, CLEMENT;EL-KAZZI, MARIO;SAINT-GIRONS, GUILLAUME;HOLLINGER, GUY
分类号	H01L21/28;H01L21/314;H01L29/51	主分类号	H01L21/28
代理机构		代理人
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