| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the occurrence of defects in a semiconductor wafer transfer after a polishing processing. Ž<P>SOLUTION: In a CMP method of a semiconductor wafer using a polishing apparatus, supply of polishing liquid is stopped after completion of CMP polishing of the semiconductor wafer, and pure water containing a surfactant agent is supplied on an interface between a semiconductor wafer 5 and a polishing pad 3, and a hydrophile processing of the interface between the polished semiconductor wafer 5 and the polishing pad 3 is carried out while rotating a semiconductor wafer holding head 4 and a polishing table 1 in the same rotation direction. After completion of the hydrophile processing, the semiconductor wafer 5 held by the semiconductor wafer holding head 4 at a position immediately after the hydrophile processing is separated from the polishing pad 3. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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