发明名称 MANUFACTURING METHOD OF SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST AND SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST
摘要 Provided is a manufacturing method of catalyst-free substrate grown graphene. More specifically, provided is a manufacturing method of catalyst-free substrate grown graphene, comprising the following steps: (a) preparing a catalyst-free layer on a substrate; (b) supplying etching gas and carbon-containing gas and conducting microwave electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD); (c) supplying etching gas in the catalyst-free layer when supplying the carbon-containing gas so as to grow graphene on the catalyst-free layer; and (d) growing graphene on the substrate without the catalyst-free layer by continuously removing all the catalyst-free layers by the etching gas while continuously conducting ECR-CVD in the process of the step (c).
申请公布号 KR20160086182(A) 申请公布日期 2016.07.19
申请号 KR20150003599 申请日期 2015.01.09
申请人 LEE, YOUN TEK 发明人 LEE, YOUN TEK
分类号 C01B31/04 主分类号 C01B31/04
代理机构 代理人
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