| 发明名称 | Directional FinFET capacitor structures | ||
| 摘要 | A method for fabricating a capacitor within a FinFET device includes patterning a first gate interconnect material having a first recess. The method also includes patterning a first trench interconnect material coupled to the first gate interconnect material at the first recess to form a first plate of a FinFET capacitive structure. | ||
| 申请公布号 | US9401357(B2) | 申请公布日期 | 2016.07.26 |
| 申请号 | US201414498322 | 申请日期 | 2014.09.26 |
| 申请人 | QUALCOMM INCORPORATED | 发明人 | Chun Hong |
| 分类号 | H01L27/06;H01L23/522;H01L49/02;H01L29/78;H01L27/08 | 主分类号 | H01L27/06 |
| 代理机构 | Sayfarth Shaw LLP | 代理人 | Sayfarth Shaw LLP |
| 主权项 | 1. A capacitor within a FinFET device, comprising: a first gate interconnect material having a first recess; a first stacked trench interconnect material coupled to the first gate interconnect material at the first recess to form a first plate of a FinFET capacitive structure; a second gate interconnect material having a second recess; and a second stacked trench interconnect material coupled to the second gate interconnect material at the second recess to form a second plate of the FinFET capacitive structure. | ||
| 地址 | San Diego CA US | ||