FinFET fin bending reduction

摘要

An embodiment method of controlling fin bending in a fin field-effect transistor (FinFET) includes forming an isolation region over a substrate, performing a first annealing process, the first annealing process including a first wet anneal, a second wet anneal, and a first dry anneal. In an embodiment, the first annealing process is followed by a chemical mechanical planarization (CMP) process, an etching process, and a second annealing process for the isolation region.

主权项

1. A method of forming a fin field-effect transistor (FinFET), the method comprising:
forming an isolation region between adjacent fins; performing a first wet anneal, the first wet anneal reducing impurities from the isolation region; performing a second wet anneal; and after performing the first wet anneal and the second wet anneal, performing a first dry anneal.