发明名称 |
METHOD FOR MAKING SOLAR CELLS |
摘要 |
A solar cell is provided. The solar cell includes a silicon substrate, a back electrode, a doped silicon layer, and an upper electrode. The silicon substrate includes a first surface, a second surface, and a number of three-dimensional nano-structures located on the first surface. The three-dimensional nano-structures are located on the second surface. The three-dimensional nano-structures are linear protruding structures that are spaced from each other, and a cross section of each linear protruding structure is an arc. The doped silicon layer is attached to the three-dimensional nano-structures and the second surface between the three-dimensional nano-structures. |
申请公布号 |
US2016225936(A1) |
申请公布日期 |
2016.08.04 |
申请号 |
US201615099521 |
申请日期 |
2016.04.14 |
申请人 |
Tsinghua University ;HON HAI PRECISION INDUSTRY CO., LTD. |
发明人 |
JIN YUAN-HAO;LI QUN-QING;FAN SHOU-SHAN |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
1. A method for making a solar cell comprising steps of:
providing a silicon plate having a first surface and a second surface; locating a patterned mask layer on the second surface, wherein the patterned mask layer comprises a plurality of linear walls aligned side by side, and a groove is defined between each adjacent two linear walls to expose an exposed portion of the second surface of the silicon plate; forming a plurality of three-dimensional structures by etching the exposed portion of the second surface of the silicon plate along a first direction and a second direction, the first direction is perpendicular to the second surface, the second direction is paralleled to second surface, the plurality of three-dimensional structures are linear protruding structures, and a cross-section of each linear protruding structure is an arc; removing the patterned mask layer and forming a doped silicon layer on surfaces of the plurality of three-dimensional structures and the second surface that is between adjacent three-dimensional structures; applying an upper electrode electrically connected to the doped silicon layer; and applying a back electrode Ohmic connected to the silicon plate. |
地址 |
Beijing CN |