发明名称 METHOD FOR MAKING SOLAR CELLS
摘要 A solar cell is provided. The solar cell includes a silicon substrate, a back electrode, a doped silicon layer, and an upper electrode. The silicon substrate includes a first surface, a second surface, and a number of three-dimensional nano-structures located on the first surface. The three-dimensional nano-structures are located on the second surface. The three-dimensional nano-structures are linear protruding structures that are spaced from each other, and a cross section of each linear protruding structure is an arc. The doped silicon layer is attached to the three-dimensional nano-structures and the second surface between the three-dimensional nano-structures.
申请公布号 US2016225936(A1) 申请公布日期 2016.08.04
申请号 US201615099521 申请日期 2016.04.14
申请人 Tsinghua University ;HON HAI PRECISION INDUSTRY CO., LTD. 发明人 JIN YUAN-HAO;LI QUN-QING;FAN SHOU-SHAN
分类号 H01L31/18 主分类号 H01L31/18
代理机构 代理人
主权项 1. A method for making a solar cell comprising steps of: providing a silicon plate having a first surface and a second surface; locating a patterned mask layer on the second surface, wherein the patterned mask layer comprises a plurality of linear walls aligned side by side, and a groove is defined between each adjacent two linear walls to expose an exposed portion of the second surface of the silicon plate; forming a plurality of three-dimensional structures by etching the exposed portion of the second surface of the silicon plate along a first direction and a second direction, the first direction is perpendicular to the second surface, the second direction is paralleled to second surface, the plurality of three-dimensional structures are linear protruding structures, and a cross-section of each linear protruding structure is an arc; removing the patterned mask layer and forming a doped silicon layer on surfaces of the plurality of three-dimensional structures and the second surface that is between adjacent three-dimensional structures; applying an upper electrode electrically connected to the doped silicon layer; and applying a back electrode Ohmic connected to the silicon plate.
地址 Beijing CN