发明名称 Semiconductor device and phase locked loop including the same
摘要 Provided are a semiconductor device and a phase-locked loop (PLL) including the same. The semiconductor device including an output node from which an output signal is output, a first transistor which has a drain connected to the output node and is gated by a first signal to increase a voltage level of the output node, a second transistor which has a drain connected to the output node, is gated by a second signal which is a complementary signal of the first signal, and reduces the voltage level of the output node, a pull-up circuit which provides a first compensation current varying according to the voltage level of the output node to a source of the first transistor, and a pull-down circuit which provides a second compensation current varying according to the voltage level of the output node to a source of the second transistor.
申请公布号 US9473154(B2) 申请公布日期 2016.10.18
申请号 US201514632468 申请日期 2015.02.26
申请人 Samsung Electronics Co., Ltd. 发明人 Kim Woo-Seok;Kim Tae-Ik;Kim Ji-Hyun
分类号 H03L7/06;H03L7/089;H02M3/04 主分类号 H03L7/06
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A semiconductor device comprising: an output node from which an output signal is output; a first transistor which has a drain connected to the output node and is gated by a first signal to increase a voltage level of the output node; a second transistor which has a drain connected to the output node, is gated by a second signal which is a complementary signal of the first signal, and reduces the voltage level of the output node; a pull-up circuit which provides a first compensation current varying according to the voltage level of the output node to a source of the first transistor; and a pull-down circuit which provides a second compensation current varying according to the voltage level of the output node to a source of the second transistor.
地址 Gyeonggi-do KR