| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering apparatus and a sputtering method that form an ITO film having high flatness and low resistivity.SOLUTION: Sputter electric power supplied to a rotary type magnetron cathode pair is 1.5 kW/m or less. Consequently, an ITO film has higher flatness when deposited in a manner in which LIA assists in sputter processing than when deposited in a manner in which the LIA does not assist in the sputter processing. In the present invention, the ITO film having the high flatness can be therefore deposited, which is desirable. Further, the ITO film has a low resistivity of 120 μΩcm or less, which is also desirable.SELECTED DRAWING: Figure 8 |
