HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR DEVICE,申请号JP19890170632-传众专利搜索

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发明名称	HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR DEVICE
摘要
申请公布号	JPH0335552(A)	申请公布日期	1991.02.15
申请号	JP19890170632	申请日期	1989.06.30
申请人	NEC KANSAI LTD	发明人	SASAKI KUNIO
分类号	H01L21/768;H01L21/8238;H01L23/522;H01L27/092	主分类号	H01L21/768
代理机构		代理人
主权项
地址

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