| 摘要 |
PURPOSE:To provide a manufacture of semiconductor devices which can be cleared of carbon-based deposits on bonding pads without damaging the surface of a polyimide. CONSTITUTION:After a polyimide precursor 5 is spread, only predetermined places are perforated by exposure and development. It is cleared of sensitizer and detergent by heat treatment to imidize into a polyimide. An aluminum film 3 is impressed with a physical force such as pressing a probe with the result that a carbon-based deposit 7 is perforated. Then, a surface layer of the aluminum film 3 and the overlaying carbon-based deposit 7 are simultaneously removed by wet etching. This process enables removal of the carbon-based deposit 7 on a bonding pad (aluminum film 3) without damaging the polyimide precursor 5. |
