发明名称 |
Method to increase cracking threshold for low-k materials |
摘要 |
A method of increasing the cracking threshold of a low-k material layer comprising the following steps. A substrate having a low-k material layer formed thereover is provided. The low-k material layer having a cracking threshold. The low-k material layer is plasma treated to increase the low-k material layer cracking threshold. The plasma treatment including a gas that is CO2, He, NH3 or combinations thereof.
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申请公布号 |
US6867126(B1) |
申请公布日期 |
2005.03.15 |
申请号 |
US20020289718 |
申请日期 |
2002.11.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LI LIH-PING;LU YUNG-CHEN;KO CHUNG-CHI |
分类号 |
H01L21/26;H01L21/3105;H01L21/316;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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