发明名称 CIRCUIT DEVICE FOR VOLTAGE CONTROL OF AMPLIFICATION FACTOR OF FIELD-EFFECT TRANSISTOR
摘要 PURPOSE: To avoid the signal distortion at an operating point with no use of an external component parts and to compensate the production allowance of a field-effect transistor by using the 1st and 2nd gate electrodes to form a signal input terminal and a DC voltage control input terminal respectively. CONSTITUTION: A 2nd transistor T2 which is similar to a working transistor T1 and has two gate electrodes G1 and G2 is connected to the T1 which leads the signals. The source S and gates G1 and G2 of the T2 are connected to the corresponding electrodes respectively in terms of DC voltage. On the other hand, an almost fixed DC current is supplied to the drain of the T2 via a current source I. The generated drain voltage is fed back to the G1 after the division or subtraction of voltage for the setting of the necessary voltage of a gate 1. The control process of the control transistor T2 is projected on the T1 owing to the similarity of both field effect transistors T1 and T2 .
申请公布号 JPH0661765(A) 申请公布日期 1994.03.04
申请号 JP19930051351 申请日期 1993.02.17
申请人 SIEMENS AG 发明人 ROTAARU MUJIOORU
分类号 H03G3/10;H03G1/00;H03G1/04;H03G11/02 主分类号 H03G3/10
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