| 摘要 |
A method for fabricating contacts of a semiconductor device capable of achieving a reduced contact resistance by using a material, such as TiSi2, exhibiting a low potential barrier to a N+ diffusion layer for a contact for the N+ diffusion layer and a material, such as PtSi, exhibiting a low potential barrier to a P+ diffusion layer for a contact for the P+ diffusion layer and performing two independent masking works respectively for the N+ diffusion layer and the P+ diffusion layer.
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