发明名称 |
Semiconductor Bi-MIS device and method of manufacturing the same |
摘要 |
A silicon oxide film as a dielectric film and a silicon nitride film or a polysilicon film as a protection film for the silicon oxide film are formed on a silicon substrate. After the two films are selectively etched to form contact holes of a bipolar transistor, a polysilicon film as a conductive film is laid on the entire substrate and selectively etched to form electrodes. In a MIS transistor, the protection film of the silicon nitride film serves as a gate insulator film and the protection film of the polysilicon film serves as a gate electrode. Accordingly, contamination to the gate insulator film at formation of contact holes of the bipolar transistor is prevented, and an excellent semiconductor with Bi-MOS structure is manufactured with low cost.
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申请公布号 |
US5406106(A) |
申请公布日期 |
1995.04.11 |
申请号 |
US19930076838 |
申请日期 |
1993.06.15 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HIRAI, TAKEHIRO;NAKATANI, MASAHIRO;TANAKA, MITSUO;KANDA, AKIHIRO |
分类号 |
H01L21/8249;H01L27/06;H01L29/51;(IPC1-7):H01L27/02;H01L27/04;H01L29/68 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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