METHOD OF FORMING OPENING IN SEMICONDUCTOR ELEMENT, MANUFACTURE OF SEMICONDUCTOR ELEMENT, AND ITS SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a method of forming an opening in a semiconductor device, which improves a difference in level coating property at the time of processing film deposition, etc., and settles the problem of open circuit in wiring caused by voids. SOLUTION: An opening, for example, a contact hole for connecting a semiconductor substrate with a conductive layer, a via hole for coupling a conductive layers, etc., are made in the manufacturing process of a semiconductor device. In this case, a recess is made first at one part of an interlayer insulating film 58, and then a fine opening h" wider in the upper part and narrower in the lower part is made by etching the residual interlayer insulating layer 58, using the spacer 66 formed at the sidewall of the recess.