| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor laser which is capable of oscillating laser rays with a low threshold current at a high slope efficiency and high in high- temperature characteristics and characteristic uniformity, by a method wherein a current constriction layer formed on each side of an active layer is formed of an insulating film and set lower in thickness than a specific value. SOLUTION: An insulating film 2 as thick as 0.1μm or below is formed on an N-InP substrate 3 to function as a current constriction layer, and an N-InP layer 9, an active layer 1, and a P-InP layer 11 are formed in this sequence in a gap of the insulating film 2. A P-InP clad layer 5 is formed on all the surface so as to cover the N-InP layer 9, the active layer 1, the P-InP layer 11, and the insulating film 2. As mentioned above, a current constriction layer formed on each side of the active layer 1 is formed of the insulating film 2, and the insulating film 2 is as thick as 0.1μm or below, whereby a current can be effectively injected into the active layer 1, and a crystal, excellent in quality and well controlled in thickness can be formed. A leakage path which causes a leakage current can be lessened in width so as to be 0.17μm or below.
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