| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which suppresses development defects and to provide a method for forming a pattern by using the composition. <P>SOLUTION: The positive resist composition contains: (A) a fluorine-containing resin which has such a structure that a fluorine atom is introduced by substitution in the main chain and/or the side chain of the polymer skeleton and which has a group decomposed by the effect of an acid to increase the solubility with an alkaline developing solution; (B) a compound which generates an acid by irradiation with active rays or radiation; and (C) a compound having at least one fluorine atom. The method for forming a pattern is carried out by using the composition. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
