发明名称 VAPOR DEPOSITION SOURCE AND VAPOR DEPOSITION APPARATUS
摘要 A deposition source and a deposition apparatus are provided to increase a deposition speed of the deposition source stably by reducing a splash in the deposition source. A deposition source contains a deposition material and includes a case and an application unit(2). The case contains the deposition material and includes an aperture(10a) which discharges a heated deposition material. The application units are vertically arranged in the case with a predetermined gap among one another. A flow space(A) for guiding a vaporized air to the aperture of the case is formed on an inner surface of the application unit. A flow path(B) which couples the flow space with the aperture of the case, is formed in a vertical direction through the aperture of the application unit. A conductance of the flow space is smaller than the conductance of the flow path.
申请公布号 KR20070095798(A) 申请公布日期 2007.10.01
申请号 KR20070027400 申请日期 2007.03.21
申请人 CANON KABUSHIKI KAISHA 发明人 YOSHIKAWA TOSHIAKI;MASHIMO SEIJI;FUKUDA NAOTO
分类号 H05B33/10 主分类号 H05B33/10
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