MAGNETIC RANDOM ACCESS MEMORY

摘要

PROBLEM TO BE SOLVED: To improve the regeneration output of an MR element by reducing writing current further in an MRAM using the MR element having a dual structure. SOLUTION: A magnetic random access memory comprises a laminate structure in which two or more ferromagnetic layers are laminated in such a manner that a non-magnetic interlayer is in between them. In the laminate structure, one of the ferromagnetic layers constitutes a recording layer for holding information in the form of magnetization. It comprises a magnetoresistive element having a structure which allows writing current to be made to flow between the upper end and the lower end of the laminate structure. At least one ferromagnetic layer comprises a Heusler alloy film. COPYRIGHT: (C)2008,JPO&INPIT