| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has an excellent contactness and can secure a high reliability, and to provide its manufacturing method. SOLUTION: The semiconductor device 1 comprises a semiconductor substrate 100, first insulation film 10 which is formed on the semiconductor substrate 100 and has trenches 11a (including through holes 11b), metal film (doping material film 13) which is formed in the trenches 11a and contains a first metal (for example, titanium (Ti)), base film 14 formed on the side face of the metal film (doping material film 13), and metal plating film (copper plating film 15) which is formed on the side face of the base film 14 and is formed of a second metal (for example, copper (Cu)) and has a region (doping material-contained layer 15a) containing the first metal (for example, Ti) on a plane in contact with the base film 14. COPYRIGHT: (C)2008,JPO&INPIT
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