| 摘要 |
PROBLEM TO BE SOLVED: To improve the adhesion properties between copper wiring and an insulation film by contriving the structure of a barrier film. SOLUTION: The semiconductor device comprises: a second insulation film 21 for covering first wiring 17 formed on a first insulation film 12 on a substrate 11; a wiring groove 25 formed on the second insulation film 21; a connection hole 26 that is formed on the second insulation film 21 at the bottom of the wiring groove 25, and is connected to the first wiring 17; a first barrier film 31 formed in the inner surfaces of the wiring groove 25 and the connection hole 26 excluding the bottom of the connection hole 26; a second barrier film 34 formed on the first insulation film 12 at the bottom of the connection hole 26; and second wiring 35 (including a plug 36) buried into the wiring groove 25 and the connection hole 26 via the first barrier film 31 and the second barrier film 34. COPYRIGHT: (C)2008,JPO&INPIT
|
