发明名称 |
Complementary nonvolatile memory device |
摘要 |
Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.
|
申请公布号 |
US7345898(B2) |
申请公布日期 |
2008.03.18 |
申请号 |
US20050154941 |
申请日期 |
2005.06.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YOON-DONG;LEE JO-WON;KIM CHUNG-WOO;LEE EUN-HONG;SEO SUN-AE;KIM WOO-JOO;CHAE HEE-SOON;CHAE SOO-DOO;SONG I-HUN |
分类号 |
G11C5/06;G11C11/56;G11C16/04;G11C16/28;H01L21/8247;H01L27/06;H01L27/115 |
主分类号 |
G11C5/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|