发明名称 METHOD FOR OPERATING NONVOLATILE MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for operating a nonvolatile memory device. <P>SOLUTION: The present invention provides a method for operating the nonvolatile memory device which includes a plurality of memory cells, including a step of stabilizing data recorded by inducing a boosting voltage on a channel of a memory cell where the data are recorded, and which is selected from a plurality of memory cells, through a channel of at least one memory cell connected to the selected memory cell. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009020994(A) 申请公布日期 2009.01.29
申请号 JP20080170891 申请日期 2008.06.30
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM WON-JOO;LEE TAKI;HYUN JAE-WOONG;PARK YOON-DONG
分类号 G11C16/02;G11C16/04;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/02
代理机构 代理人
主权项
地址