发明名称 MEMORY SYSTEM WITH IMPROVED RELIABILITY AND WEAR-LEVELING TECHNIQUE THEREOF
摘要 <p>A memory system and a wear-leveling method thereof are provided to improve reliability of a memory device by performing a wear-leveling operation based on ECC(Error Correction Code) event information. A memory system includes a flash memory device(140) and a memory controller(120). The flash memory device has memory units composed of a plurality of memory cells. The memory controller controls the flash memory device. The memory controller performs a wear-leveling operation about the memory units based on deleting event information and ECC event information of each memory unit. The deleting event information includes the number of deleting event of each memory unit. The ECC event information includes error bit values of each memory unit.</p>
申请公布号 KR20090027952(A) 申请公布日期 2009.03.18
申请号 KR20070093173 申请日期 2007.09.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YIM, YONG TAE;JO, SEON GKUE
分类号 G11C16/00 主分类号 G11C16/00
代理机构 代理人
主权项
地址