| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a single crystal by which dispersion in resistivity to crystal length is suppressed small, a single crystal having a high dislocation-free rate is obtained, consumption of an inert gas is not increased and operation time is not elongated. Ž<P>SOLUTION: In the method, a step of supplying an inert gas G flowing from upside to downside in a radiation shield 6 arranged above a crucible 3 so as to surround a crystal pulling range and flowing the inert gas G introduced into the crucible 3 from the downside of the radiation shield 6 along two flow passages formed by dividing a space in the height direction by a flow regulation plate 7 placed in the space between the radiation shield 6 and a silicon melt surface M1 until a single crystal C grows up to a predetermined length, and after the single crystal C exceeds the predetermined length a step of flowing the inert gas G introduced into the crucible 3 from the downside of the radiation shield 6 along a single flow passage formed between the flow regulation plate 7 and the silicon melt surface M1 by making the flow regulation plate 7 into contact with the radiation shield 6 are performed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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