| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer which can inhibit occurrence of a striation when used as an optimum substrate for a product such as a CCD and a CMOS sensor which requires high yield, and to provide an epitaxial wafer manufacturing method, a solid state imaging element, and a solid state imaging element manufacturing method.SOLUTION: In an epitaxial wafer manufacturing method, when an oxygen precipitation heat treatment is performed on a silicon substrate and subsequently an epitaxial layer is formed to manufacture an epitaxial wafer, an epitaxial wafer which has a leakage current value of 1.5 E-10 A and under is manufactured by control of a condition of the oxygen precipitation heat treatment. |
