| 摘要 |
<P>PROBLEM TO BE SOLVED: To determine accurately a backward scattering intensity of electrons in a resist layer, by considering the scatterings of electrons which are performed in a plurality of layers present under the resist layer. <P>SOLUTION: The method for generating the backward scattering intensity of charged particles when irradiating by a charged-particle beam a resist layer present on a plurality of layers containing respectively the patterns of a plurality of substances has a process for giving every substance to an nth layer a reflection coefficient rn, a transmission coefficient tn, and distance coefficients an depending on scattering lengths wherewith the nth layer reflects, transmits, and scatters the charged particles transmitted by an (n-1)th layer, and has a process for so performing the area integration of a predetermined noted region of the nth layer, which is associated with the affected scattering intensity of the charged particles of the noted region by the ones of its peripheral regions, as to respond to the area densities αn of the substance and the distance coefficients an corresponding to the distances ranging from the noted region to its peripheral regions. Then, the foregoing processes to the nth layer are so performed recursively from a first layer to the lowermost layer as the backward scattering intensity a third charged-particle intensity determined by the lower layers present under the resist layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
